Ted Higman

Associate Professor

Research Area: Micro and Nanostructures

6-125 Keller Hall

Area of Expertise:

Devices and fabrication technologies


Ph.D., EE, 1989, University of Illinois, Chicago, IL, United States
M.S., EE, 1982, Purdue University, West Lafayette, IN, United States
B.S., EE, 1981, Purdue University, West Lafayette, IN, United States


My research interests are in the areas of electron device fabrication, with a special emphasis on the use of scanning tunneling microscope (STM) as a lithographic tool, and high-field transport in semiconductors, with recent emphasis on hot carrier injection into insulating layers and its effect upon the reliability of these insulators.


B. Lee and T. Higman, “1.2V constant-gm rail-to-rail CMOS Op-Amp input stage with new overlapped transition regions technique for ECG amplifier,” 2013 35th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC), Osaka, 2013, pp. 3451-3454.

B. Lee and T. Higman, “1V rail-to-rail constant Gm amplifier with common-mode elimination technique,” 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), Beijing, 2013, pp. 385-388.

B. Lee and T. Higman, “Extremely simple constant-gm technique for low voltage rail-to-rail amplifier input stage,” 2011 18th IEEE International Conference on Electronics, Circuits, and Systems, Beirut, 2011, pp. 314-317.

Higman, Ted K., Jihong Chen, M. S. Hagedorn, F. Williamson. “Real-space Transfer by Hot Electron Resonant Tunneling”. Superlattices and Microstructures.

Higman, Ted K., R. T. Fayfield, M. S. Hagedorn, K. H. Lee, S. A. Campbell, J. N. Baillargeron, and K. Y. Cheng. “Low Temperature Nitridation of Silicon by Direct Ammonia Nitridation in a Molecular Beam Epitaxy Reactor”” Journal of Vacuum Science and Technology, B11 (1993): 992.

Lyding, J., R. Brockenborough, P. Faye, J. Tucker, K. Hess, and T. Higman. “Scanning Tunneling Microscope Based Nanolithography for Electron Device Fabrication”. SPIE Publications.